Effect of silicon and putrescine foliar applications on growth and yield of globe artichoke plants [electronic resource].

Includes references.

Field experiments were carried out to investigate the effect of silicon (500 and 1000 ppm Si02) or Putrescine (1 and 2 ppm) sprayed twice at 45 and 60 days after planting on the growth, yield and chemical composition of the two local cultivars of globe artichoke plant in Egypt i.e., Balady and French (Hyrious) cultivars. Generally, French (Hyrious) cultivar which sprayed by silicon (1000 ppm Si02) was the best treatment on growth characters and yield components and recorded the highest values of early and total yield increases in the two successive seasons when compared with non- sprayed plants, followed by French (Hyrious) cultivar sprayed by putrescine (1 ppm). French cultivar sprayed by silicon (1000 ppm Si02) was the best for significant increased in P concentration of leaves and it was the best interaction treatment led to increase on total sugar concentration in the tow successive seasons when compared with control- untreated plants followed by French cultivar sprayed by putrescine (2 ppm). While, French cultivar sprayed by putrescine (2 ppm) followed French cultivar with sprayed by silicon (1000 ppm Si02) were the best treatments which caused significant increased in total free amino acids in the two successive seasons.

Summary in Arabic.

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